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Springer手册精选原版系列：半导体物理性能手册（第3卷上册）

Springer手册精选原版系列：半导体物理性能手册（第3卷上册）

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作者: [日] 足立贞夫编

出版社: 哈尔滨工业大学出版社

出版时间: 2014-04

版次: 1

ISBN: 9787560345185

定价: 158.00

装帧: 平装

开本: 16开

纸张: 胶版纸

页数: 253页

正文语种: 简体中文，英语

丛书: Springer手册精选原版系列

分类: 自然科学

3 张插图图片

2人买过

　　Theprogressmadeinphysicsandtechnologyofsemiconductorsdependsmain.lyonthreefamiliesofmaterials:thegroup-IVelemental，III-V，andII-VIcompoundsemiconductors.AlmostallⅡⅥcompoundsemiconductorscrystallizeeitherinthezincblendeorwurtzitestructure.ThefirstresearchpapersonII-VIcompoundsemiconductorsdatebacktothemiddleofthenineteenthcentury.Intheensuringhundredyearsextensiveliteraturehasbeenaccumulatedasmuchresearchanddevelopmentworksarebeingcarriedoutonthesecompoundsemiconductors.Atpresent，theII-VIcompoundsemiconductorsarewidelyusedasphotodetectors，x-raysensorsandscintillators，phosphorsinlighting，displays，etc.Newapplicationsarecontinuouslybeingproposed.Thus，itseemstotimelybringtogetherthemostup-to-dateinformationonthematerialandsemiconductingpropertiesofII-VIcompoundsemiconductors. Preface
Acknowledgments
ContentsofOtherVolumes
1MagnesiumOxide(Mg0)
1.1StructuralProperties
1.1.1Ionicity
1.1.2ElementalIsotopicAbundanceandMolecularWeight
1.1.3CrystalStructureandSpaceGroup
1.1.4LatticeConstantandItsRelatedParameters
1.1.5StructuralPhaseTransition
1.1.6CleavagePlane
1.2ThermalProperties
1.2.1MeltingPointandItsRelatedParameters
1.2.2SpecificHeat
1.2.3DebyeTemperature
1.2.4ThermalExpansionCoefficient
1.2.5ThermalConductivityandDiffusivity
1.3ElasticProperties
1.3.1ElasticConstant
1.3.2Third-OrderElasticConstant
1.3.3Young'sModulus,Poisson'sRatio,andSimilar
1.3.4Microhardness
1.3.5SoundVelocity
1.4PhononsandLatticeVibronicProperties
1.4.1PhononDispersionRelation
1.4.2PhononFrequency
1.4.3ModeGruneisenParameter
1.4.4PhononDeformationPotential
1.5CollectiveEffectsandRelatedProperties
1.5.1PiezoelectricConstant
1.5.2FrohlichCouplingConstant
1.6Energy-BandStructure:Energy-BandGaps
1.6.1BasicProperties
1.6.2Eo-GapRegion
1.6.3Higher-LyingDirectGap
1.6.4LowestIndirectGap
1.6.5Conduction-ValleyEnergySeparation
1.6.6Direct-Indirect-GapTransitionPressure
1.7Energy-BandStructure:ElectronandHoleEffectiveMasses
1.7.1ElectronEffectiveMass:FValley
1.7.2ElectronEffectiveMass:SatelliteValley
1.7.3HoleEffectiveMass
1.8ElectronicDeformationPotential
1.8.1IntravalleyDeformationPotential:FPoint
1.8.2IntravalleyDeformationPotential:High-SymmetryPoints
1.8.3IntervalleyDeformationPotential
1.9ElectronAffinityandSchottkyBarrierHeight
1.9.1ElectronAffinity
1.9.2SchottkyBarrierHeight
1.10OpticalProperties
1.10.1SummaryofOpticalDispersionRelations
1.10.2TheReststrahlenRegion
1.10.3AtorNeartheFundamentalAbsorptionEdge
1.10.4TheInterbandTransitionRegion
1.10.5Free-CarrierAbsorptionandRelatedPhenomena
1.11Elastooptic,Electrooptic,andNonlinearOpticalProperties
1.11.1ElastoopticEffect/
1.11.2LinearElectroopticConstant/
1.11.3QuadraticElectroopticConstant/
1.11.4Franz-KeldyshEffect
1.11.5NonlinearOpticalConstant
1.12CarrierTransportProperties
1.12.1Low-FieldMobility:Electrons
1.12.2Low-FieldMobility:Holes
1.12.3High-FieldTransport:Elec,trons
1.12.4High-FieldTransport:Holes
1.12.5Minority-CarrierTransport:Electronsinp-TypeMaterials
1.12.6Minority-CarrierTransport:Holesinn-TypeMaterials
……
2ZincblendeMagnesiumSulphide(β-MgS)
3ZincblendeMagnesiumSelenide（βMgSe)
4ZincblendeMagnesiumTelluride（β-MgTe)
5ZincOxide(Zn0)
6WurtziteZincSulphide(a-ZnS)
7CubicZincSulphide(β-ZnS)
8ZincSelenide(ZnSe)
9ZincTelluride(ZnTe)
内容简介:
　　Theprogressmadeinphysicsandtechnologyofsemiconductorsdependsmain.lyonthreefamiliesofmaterials:thegroup-IVelemental，III-V，andII-VIcompoundsemiconductors.AlmostallⅡⅥcompoundsemiconductorscrystallizeeitherinthezincblendeorwurtzitestructure.ThefirstresearchpapersonII-VIcompoundsemiconductorsdatebacktothemiddleofthenineteenthcentury.Intheensuringhundredyearsextensiveliteraturehasbeenaccumulatedasmuchresearchanddevelopmentworksarebeingcarriedoutonthesecompoundsemiconductors.Atpresent，theII-VIcompoundsemiconductorsarewidelyusedasphotodetectors，x-raysensorsandscintillators，phosphorsinlighting，displays，etc.Newapplicationsarecontinuouslybeingproposed.Thus，itseemstotimelybringtogetherthemostup-to-dateinformationonthematerialandsemiconductingpropertiesofII-VIcompoundsemiconductors.
目录:
Preface
Acknowledgments
ContentsofOtherVolumes
1MagnesiumOxide(Mg0)
1.1StructuralProperties
1.1.1Ionicity
1.1.2ElementalIsotopicAbundanceandMolecularWeight
1.1.3CrystalStructureandSpaceGroup
1.1.4LatticeConstantandItsRelatedParameters
1.1.5StructuralPhaseTransition
1.1.6CleavagePlane
1.2ThermalProperties
1.2.1MeltingPointandItsRelatedParameters
1.2.2SpecificHeat
1.2.3DebyeTemperature
1.2.4ThermalExpansionCoefficient
1.2.5ThermalConductivityandDiffusivity
1.3ElasticProperties
1.3.1ElasticConstant
1.3.2Third-OrderElasticConstant
1.3.3Young'sModulus,Poisson'sRatio,andSimilar
1.3.4Microhardness
1.3.5SoundVelocity
1.4PhononsandLatticeVibronicProperties
1.4.1PhononDispersionRelation
1.4.2PhononFrequency
1.4.3ModeGruneisenParameter
1.4.4PhononDeformationPotential
1.5CollectiveEffectsandRelatedProperties
1.5.1PiezoelectricConstant
1.5.2FrohlichCouplingConstant
1.6Energy-BandStructure:Energy-BandGaps
1.6.1BasicProperties
1.6.2Eo-GapRegion
1.6.3Higher-LyingDirectGap
1.6.4LowestIndirectGap
1.6.5Conduction-ValleyEnergySeparation
1.6.6Direct-Indirect-GapTransitionPressure
1.7Energy-BandStructure:ElectronandHoleEffectiveMasses
1.7.1ElectronEffectiveMass:FValley
1.7.2ElectronEffectiveMass:SatelliteValley
1.7.3HoleEffectiveMass
1.8ElectronicDeformationPotential
1.8.1IntravalleyDeformationPotential:FPoint
1.8.2IntravalleyDeformationPotential:High-SymmetryPoints
1.8.3IntervalleyDeformationPotential
1.9ElectronAffinityandSchottkyBarrierHeight
1.9.1ElectronAffinity
1.9.2SchottkyBarrierHeight
1.10OpticalProperties
1.10.1SummaryofOpticalDispersionRelations
1.10.2TheReststrahlenRegion
1.10.3AtorNeartheFundamentalAbsorptionEdge
1.10.4TheInterbandTransitionRegion
1.10.5Free-CarrierAbsorptionandRelatedPhenomena
1.11Elastooptic,Electrooptic,andNonlinearOpticalProperties
1.11.1ElastoopticEffect/
1.11.2LinearElectroopticConstant/
1.11.3QuadraticElectroopticConstant/
1.11.4Franz-KeldyshEffect
1.11.5NonlinearOpticalConstant
1.12CarrierTransportProperties
1.12.1Low-FieldMobility:Electrons
1.12.2Low-FieldMobility:Holes
1.12.3High-FieldTransport:Elec,trons
1.12.4High-FieldTransport:Holes
1.12.5Minority-CarrierTransport:Electronsinp-TypeMaterials
1.12.6Minority-CarrierTransport:Holesinn-TypeMaterials
……
2ZincblendeMagnesiumSulphide(β-MgS)
3ZincblendeMagnesiumSelenide（βMgSe)
4ZincblendeMagnesiumTelluride（β-MgTe)
5ZincOxide(Zn0)
6WurtziteZincSulphide(a-ZnS)
7CubicZincSulphide(β-ZnS)
8ZincSelenide(ZnSe)
9ZincTelluride(ZnTe)

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